1 4

IRFZ44N Power MOSFET TO-220

SKU: IKI03H0RT3
IRFZ44N Power MOSFET is a Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety...
Rs. 24.00
Rs. 29.00 Rs. 24.00
Save Rs. 5
Sold out
Tax included. Shipping calculated at checkout.
Guaranteed safe & secure checkout

Shipping & Returns

Orders placed before 3 PM IST will be shipped on the same day (excluding Sundays and Public holidays) through our shipping partners. In rare cases, the pickup may get delayed during Public holidays / Bandh / Environmental disturbances.

Specifications

Specifications:

Type: N-Channel MOSFET
Drain-Source Voltage (Vds): 55V
Continuous Drain Current (Id): Up to 49A (with proper cooling)
Gate Threshold Voltage (Vgs(th)): 2V – 4V
Rds(on): ~0.022Ω (low resistance)
Package: TO-220
Operating Temperature: -55°C to +175°C

Additional Resources

IRFZ44N Power MOSFET TO-220.PDF

FAQ

1. What is an IRFZ44N MOSFET?

The IRFZ44N is an N-channel power MOSFET based on the MOSFET principle, used for switching and amplifying high-power electrical signals.

2. What are the pin configurations of the IRFZ44N?

In the TO-220 package, the pins are:

  • Gate (G) – controls switching
  • Drain (D) – connected to the load
  • Source (S) – connected to ground/reference

3. Is the IRFZ44N a logic-level MOSFET?

No, it is not a logic-level MOSFET. It typically requires around 10V at the gate for full switching performance, so it may not fully turn on with 5V logic directly.

4. What are common applications of the IRFZ44N?

It is widely used in motor drivers, SMPS, inverters, LED dimmers, and for controlling high-power loads using microcontrollers like Arduino Uno.

5. Why is a heatsink recommended for this MOSFET?

A heatsink helps dissipate heat generated during high current operation, preventing overheating and ensuring reliable performance.

View full product details

IRFZ44N Power MOSFET is a Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Specifications

  • Advanced Process Technology
  • Ultra Low On-Resistance
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated